Semiconductor device and method of manufacturing the same

摘要

In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a silicon substrate and has a back-surface electrode formed on a back surface of the silicon substrate and electrically connected with the bump electrode. The bump electrode has a protruding portion penetrating through the pad and protruding toward the silicon substrate side. The back-surface electrode is formed so as to reach the protruding portion of the bump electrode from the back surface side of the silicon substrate toward the main surface side and to cover the inside of a back-surface electrode hole portion which does not reach the pad, so that the back-surface electrode is electrically connected with the bump electrode.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a main surface and a back surface positioned on an opposite side to the main surface; a first insulating film formed on the main surface of the semiconductor substrate; a first hole formed in the first insulating film; a second hole formed in the back surface of the semiconductor substrate; a bump electrode disposed over the first insulating film and having a protruding portion which is formed at least in the first hole and which reaches the inside of the semiconductor substrate in a cross-sectional view; a second insulating film formed on a side surface of the second hole; and a conductive film formed in the second hole and electrically connected to the bump electrode, wherein, in a planar view, a diameter of the protruding portion is smaller than a diameter of the second hole; and wherein the conductive film is connected to a side surface and a bottom surface of the protruding portion; wherein the first hole is entirely filled with the bump electrode; and wherein the second hole is not entirely filled with the conductive film.