IC device including package structure and method of forming the same

摘要

Various embodiments provide semiconductor devices including a package structure and methods of forming the semiconductor devices. In one embodiment, the package structure can include a through-hole at least partially filled by one or more layers of material(s) to form a through-hole interconnect between semiconductor devices in the package structure. The through-hole can be filled by an insulating layer, a diffusion barrier layer, a metal interconnect layer, and/or a protective layer having a total thickness from the sidewall of the through-hole of less than or equal to the radius of the through-hole.

主权项

1. An integrated circuit (IC) device comprising:
a first substrate structure; a first metal interconnect structure disposed on the first substrate structure; a second substrate structure disposed over the first substrate structure, the second substrate structure including a through-hole disposed there-through and positioned over the first metal interconnect structure on the first substrate structure; a second metal interconnect structure disposed on the second substrate structure; an insulating layer disposed on sidewall of the through-hole in the second substrate structure; a diffusion barrier layer disposed on the insulating layer, a portion of the first metal interconnect structure corresponding to the through-hole, a surface portion of the second substrate structure, and the second metal interconnect structure on the second substrate structure; and a metal interconnect layer disposed on the diffusion barrier layer, wherein a total thickness of the insulating layer, the diffusion barrier layer, and the metal interconnect layer is less than a radius of the through-hole.