Stacked integrated chips and methods of fabrication thereof

摘要

Structure and methods of forming stacked semiconductor chips are described. In one embodiment, a method of forming a semiconductor chip includes forming an opening for a through substrate via from a top surface of a first substrate. The sidewalls of the opening are lined with an insulating liner and the opened filled with a conductive fill material. The first substrate is etched from an opposite bottom surface to form a protrusion, the protrusion being covered with the insulating liner. A resist layer is deposited around the protrusion to expose a portion of the insulating liner. The exposed insulating liner is etched to form a sidewall spacer along the protrusion.

主权项

1. A semiconductor device comprising:
a substrate having a first side and a second side, the second side being opposite the first side; a through substrate via (TSV) extending from the first side to the second side of the substrate, the TSV comprising: a conductive fill material; a liner material surrounding the conductive fill material; and a protrusion from the first side, the protrusion comprising:
a first portion extending a first height from the first side, the first portion being surrounded by the liner material; anda second portion having a conductive coating on a first surface of the conductive fill material, the first surface being substantially parallel with the first side of the substrate, the conductive coating and the liner material being vertically separated by the second portion of the protrusion; and an underfill material surrounding the protrusion of the TSV.