| 发明名称 | Compound semiconductor device and manufacturing method thereof | ||
| 摘要 | A compound semiconductor device includes a compound semiconductor laminated structure; a source electrode, a drain electrode, and a gate electrode formed over the compound semiconductor laminated structure; a first protective film formed over the compound semiconductor laminated structure between the source electrode and the gate electrode and including silicon; and a second protective film formed over the compound semiconductor laminated structure between the drain electrode and the gate electrode and including more silicon than the first protective film. | ||
| 申请公布号 | US8816408(B2) | 申请公布日期 | 2014.08.26 |
| 申请号 | US201012721052 | 申请日期 | 2010.03.10 |
| 申请人 | Fujitsu Limited | 发明人 | Makiyama Kozo;Kikkawa Toshihide |
| 分类号 | H01L29/66;H01L29/778;H01L29/78;H01L29/20;H01L29/06;H01L29/423 | 主分类号 | H01L29/66 |
| 代理机构 | Westerman, Hattori, Daniels & Adrian, LLP | 代理人 | Westerman, Hattori, Daniels & Adrian, LLP |
| 主权项 | 1. A compound semiconductor device comprising: a compound semiconductor laminated structure; a source electrode, a drain electrode, and a gate electrode formed over the compound semiconductor laminated structure; a first protective film formed on the compound semiconductor laminated structure between the source electrode and the gate electrode and including silicon, at least a part of the first protective film directly contacts with the compound semiconductor laminated structure; and a second protective film formed on the compound semiconductor laminated structure between the drain electrode and the gate electrode and including more silicon than the first protective film, at least a part of the second protective film directly contacts with the compound semiconductor laminated structure, wherein the gate electrode is arranged at a position closer to the source electrode than the drain electrode. | ||
| 地址 | Kawasaki JP | ||