Method of processing MIM capacitors to reduce leakage current

摘要

A method for processing dielectric materials and electrodes to decrease leakage current is disclosed. The method includes a post dielectric anneal treatment in an oxidizing atmosphere to reduce the concentration of oxygen vacancies in the dielectric material. The method further includes a post metallization anneal treatment in an oxidizing atmosphere to reduce the concentration of interface states at the electrode/dielectric interface and to further reduce the concentration of oxygen vacancies in the dielectric material.

主权项

1. A method for producing a capacitor stack, the method comprising:
forming a first electrode layer on a substrate
wherein the first electrode layer comprises molybdenum oxide; directly after forming the first electrode layer, annealing the first electrode and the substrate in a reducing atmosphere comprising one of N2 or Ar and comprising one of H2 and NH3, forming a dielectric layer on the first electrode layer,
the dielectric layer directly interfacing the first electrode layer,the dielectric layer is a doped TiO2,
wherein at least 30% of the doped TiO2 is in a rutile phase,the dielectric layer formed using atomic layer deposition at a temperature of between about 200° C. and 350° C.; directly after forming the dielectric layer, annealing the dielectric layer and the first electrode layer in a first oxidizing atmosphere comprising one of O3, H2O, N7O, H7O2 and comprising one of N2 or Ar
wherein annealing the dielectric layer and the first electrode layer further oxidizes the doped TiO2 and fills oxygen vacancies in the doped TiO2,wherein the dielectric layer and the first electrode are annealed in the first oxidizing atmosphere at a temperature of at least about 500° C.; forming a second electrode layer on the dielectric layer; and directly after forming the second electrode layer, annealing the second electrode, the dielectric layer, and the first electrode in an inert atmosphere thereby crystallizing the second electrode and maintaining an oxidation state and an oxygen vacancy state of the doped TiO2.