| 发明名称 | Photomask defect correcting method and device | ||
| 摘要 | A photomask defect correction method and device correct an opaque or a clear defect of a photomask. An opaque or clear defect in a portion of a photomask to be corrected is observed and information of the observed defect for performing correction of the defect is acquired. The observed defect is corrected in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam from an ion beam irradiation system having a gas field ion source that generates gas ions for forming the focused ion beam. The gas ions may be hydrogen ions, nitrogen ions, oxygen ions, fluorine ions or chlorine ions. | ||
| 申请公布号 | US8815474(B2) | 申请公布日期 | 2014.08.26 |
| 申请号 | US201213601028 | 申请日期 | 2012.08.31 |
| 申请人 | Hitachi High-Tech Science Corporation | 发明人 | Takaoka Osamu |
| 分类号 | G03F1/72;G03F1/74 | 主分类号 | G03F1/72 |
| 代理机构 | Adams & Wilks | 代理人 | Adams & Wilks |
| 主权项 | 1. A photomask defect correction method for correcting a defect of a photmask, the defect correction method comprising: an observation process of observing a defect in a portion of a photomask to be corrected and acquiring information of the observed defect for performing correction of the defect; and a defect correction process of correcting the observed defect in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam generated by an ion beam irradiation system having a gas field ion source that generates gas ions for forming the focused ion beam, wherein the gas ions are selected from the group consisting of hydrogen ions, nitrogen ions, oxygen ions, fluorine ions, and chlorine ions. | ||
| 地址 | JP | ||