SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

A MOSFET (1) includes: a substrate (10) made of silicon carbide and having a first trench (16) and a second trench (17) formed therein, the first trench (16) having an opening at the main surface (10a) side, the second trench (17) having an opening at the main surface (10a) side and being shallower than the first trench (16); a gate insulating film (20); a gate electrode (30); and a source electrode (50) disposed on and in contact with a wall surface (17a) of the second trench (17). The substrate (10) includes a source region (15), a body region (14), and a drift region (13). The first trench (16) is formed to extend through the source region (15) and the body region (14) and reach the drift region (13). The second trench (17) is formed to extend through the source region (15) and reach the body region (14).