FinFET device with a graphene gate electrode and methods of forming same

摘要

One illustrative device disclosed herein includes at least one fin comprised of a semiconducting material, a layer of gate insulation material positioned adjacent an outer surface of the fin, a gate electrode comprised of graphene positioned on the layer of gate insulation material around at least a portion of the fin, and an insulating material formed on the gate electrode.

主权项

1. A method for forming a FinFET device, comprising:
forming at least one fin in a semiconducting substrate; forming a layer of gate insulation material adjacent said fin; forming a gate electrode comprised of graphene, wherein at least said layer of gate insulation material is positioned between said gate electrode and said fin and wherein forming the gate electrode comprises:
forming a first portion of graphic material on said gate insulation material and a second portion of grapheme material positioned vertically above and spaced apart from the first portion of graphene material:performing at least one patterning process to remove at least portions of the second portion of grapheme material to thereby define said gate electrode comprised of said first portion of grapheme material; and forming an insulating material on said gate electrode.