发明名称 Substrate processing apparatus
摘要 A substrate processing apparatus including a holder for rotatably holding a substrate; a coating solution supply nozzle for supplying a coating solution onto a front surface of the substrate to be processed held by the holder; a treatment chamber housing the holder and the coating solution supply nozzle; a cooling device which cools the substrate before the coating solution is supplied to the substrate, to a predetermined temperature; a heating devices which heats the substrate coated with the coating solution to a predetermined temperature; and a transferer that transfers the substrate between the treatment chamber, the cooling device and the heating device, wherein the treatment chamber, the cooling device and the heating device are partitioned from ambient air, and wherein at least the treatment chamber is connected to a gas supply mechanism having a supply source of a gas having a kinematic viscosity coefficient higher than that of air.
申请公布号 US8813678(B2) 申请公布日期 2014.08.26
申请号 US201213586437 申请日期 2012.08.15
申请人 Tokyo Electron Limited 发明人 Sakamoto Kazuo
分类号 B05C5/02;G03F7/16;H01L21/027;B05C11/08 主分类号 B05C5/02
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A substrate processing apparatus, comprising: a holder for rotatably holding a substrate to be processed; a coating solution supply nozzle for supplying a coating solution onto a front surface of the substrate to be processed held by said holder; a treatment chamber housing said holder and said coating solution supply nozzle; a cooling device which cools the substrate to be processed before the coating solution is supplied to the substrate to be processed, to a predetermined temperature; a heating device that heats the substrate to be processed coated with the coating solution to a predetermined temperature; and a transferer that transfers the substrate to be processed between said treatment chamber, said cooling device and said heating device, a pre-processing chamber housing said cooling device and a post-processing chamber housing said heating device, said pre-processing and post-processing chambers being connected to said treatment chamber via transfer in/out ports for the substrate to be processed, one transfer in/out port is located between the pre-processing chamber and the treatment chamber, and another transfer in/out port is located between the post-processing chamber and the treatment chamber, wherein said treatment chamber, said cooling device and said heating device are partitioned from an ambient air, wherein said treatment chamber, said pre-processing chamber, and said post-processing chamber are connected to a single gas supply mechanism having a supply source of a gas having a kinematic viscosity coefficient higher than that of air and kept at a predetermined concentration of the gas to maintain uniform pressure between said treatment chamber, said pre-processing chamber, and said post-processing chamber, and wherein the gas is a helium gas, and the predetermined concentration is 90% or higher.
地址 Tokyo JP