METHOD FOR FORMING OXIDE THIN FILM AND METHOD FOR FABRICATING OXIDE THIN FILM TRANSISTOR EMPLOYING HYDROGEN PEROXIDE

摘要

The present invention relates to a method of forming an oxide thin film and a method of manufacturing an oxide thin film using hydrogen peroxide. The method of forming an oxide thin film according to an embodiment comprises a step of mixing hydrogen peroxide in a precursor solution that a precursor material is dissolved in a solvent; a step of spreading the precursor solution with the hydrogen peroxide mixed on a substrate within a predetermined time after mixing the hydrogen peroxide; a step of thermally processing the substrate at a first temperature; and a step of thermally processing the substrate at a second temperature.