Substrate holding device

摘要

A substrate holding device for clamping a substrate in a processing chamber in which plasma processing is carried out includes a chuck main body having positive and negative electrodes and, a chuck plate having a rib portion capable of bringing the peripheral edge portion of the substrate into surface contact therewith and multiple support portions provided upright and arranged at predetermined intervals in an internal space surrounded by the rib portion, a DC power supply for applying a DC voltage between the two electrodes, an AC power supply for passing an alternating current through the capacitance of the chuck plate, and first measuring means for measuring the alternating current passing through the capacitance of the chuck plate, and further includes removing means for removing an AC component superimposed on the alternating current from a plasma produced in the processing chamber during plasma processing.

主权项

1. A substrate holding device for clamping a substrate in a processing chamber in which plasma processing is carried out, the substrate holding device comprising:
a chuck main body having positive and negative electrodes; a dielectric chuck plate having a rib portion capable of bringing a peripheral edge portion of the substrate into surface contact therewith, and multiple support portions provided upright and arranged at predetermined intervals in an internal space surrounded by the rib portion; a DC power supply for applying a DC voltage between the two electrodes; an AC power supply for passing an alternating current through capacitance of the chuck plate; first measuring means for measuring the alternating current passing through the capacitance of the chuck plate; removing means for removing an AC component superimposed on the alternating current from a plasma produced in the processing chamber during the plasma processing; and gas introduction means for introducing a predetermined gas into the internal space; and second measuring means for measuring a gas flow rate of the gas introduced into the internal space, wherein the control means controls the DC voltage applied between the two electrodes so that the gas flow rate measured with the second measuring means is in a predetermined range.