| 发明名称 |
P-contact layer for a III-P semiconductor light emitting device |
| 摘要 |
A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1-x p-contact layer, wherein x<0.45. A first metal contact is in direct contact with the GaAsxP1-x p-contact layer. A second metal contact is electrically connected to the n-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. |
| 申请公布号 |
US8816368(B2) |
申请公布日期 |
2014.08.26 |
| 申请号 |
US201113204750 |
申请日期 |
2011.08.08 |
| 申请人 |
Koninklijke Philips N.V. |
发明人 |
Chung Theodore;Munkholm Anneli |
| 分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a semiconductor structure comprising: at least one III-P light emitting layer disposed between an n-type region and a p-type region; a GaAsxP1-x p-contact layer, wherein x<0.45; a first metal contact in direct contact with the GaAsxP1-x p-contact layer comprising:
a mirror; anda plurality of ohmic contact regions disposed between the mirror and the GaAsxP1-x p-contact layer; and a second metal contact electrically connected to the n-type region; wherein the first and second metal contacts are formed on opposite sides of the semiconductor structure. |
| 地址 |
Eindhoven NL |
