发明名称 Ion energy analyzer and methods of manufacturing the same
摘要 A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.
申请公布号 US8816281(B2) 申请公布日期 2014.08.26
申请号 US201213433088 申请日期 2012.03.28
申请人 Tokyo Electron Limited 发明人 Funk Merritt;Chen Lee;Lane Barton;Zhao Jianping;Sundararajan Radha
分类号 G01T1/16;H01J37/32;H05H1/00;H01J49/48 主分类号 G01T1/16
代理机构 Wood, Herron & Evans, LLP 代理人 Wood, Herron & Evans, LLP
主权项 1. An ion energy analyzer for use in determining an ion energy distribution of a plasma, the ion energy analyzer comprising: a first substrate processed to form an entrance grid having a first channel therein and a first plurality of openings extending therethrough; a second substrate processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough; a light source positioned on a first side of the entrance grid and the selection grid and configured to transmit light through the first and second plurality of openings; a photodiode positioned on a second side of the entrance grid and the selection grid that is opposite the light source and configured to receive the light transmitted from the light source as the light is transmitted through the first and second plurality of openings; the first and second substrates being vertically aligned by adjusting the first and second plurality of openings of the entrance grid and the selection grid relative to each other such that the photodiode detects a maximum of the light transmitted vertically from the light source through the first and second plurality of openings to the photodiode on the opposite side of the vertically aligned substrates; a third substrate processed to form an ion collector having a third channel therein; and the entrance grid being operatively coupled to the selection grid by DC isolating the entrance grid from the selection grid and the selection grid from the ion collector.
地址 Tokyo JP