Reducing damage to low-K materials during photoresist stripping

摘要

A method of forming features in a porous low-k dielectric layer disposed below a patterned organic mask is provided. Features are etched into the porous low-k dielectric layer through the patterned organic mask, and then the patterned organic mask is stripped. The stripping of the patterned organic mask includes providing a stripping gas comprising COS, forming a plasma from the stripping gas, and stopping the stripping gas. A cap layer may be provided between the porous low-k dielectric layer and the patterned organic mask. The stripping of the patterned organic mask leaves the cap layer on the porous low-k dielectric layer.

主权项

1. A method of forming features in a porous low-k dielectric layer disposed below a patterned organic resist mask made of a resist material, comprising:
(a) etching features into the porous low-k dielectric layer through the patterned organic resist mask; and (b) stripping the patterned organic resist mask, comprising:
providing a stripping gas comprising COS;forming a plasma from the stripping gas; andstopping the stripping gas, wherein a flow ratio of COS is about 5 to 15% of the total flow of the stripping gas.