Methods of forming bulk FinFET semiconductor devices by performing a liner recessing process to define fin heights and FinFET devices with such a recessed liner

摘要

One method disclosed herein includes forming a conformal liner layer in a plurality of trenches that define a fin, forming a layer of insulating material above the liner layer, exposing portions of the liner layer, removing portions of the liner layer so as to result in a generally U-shaped liner positioned at a bottom of each of the trenches, performing at least one third etching process on the layer of insulating material, wherein at least a portion of the layer of insulating material is positioned within a cavity of the U-shaped liner layer, and forming a gate structure around the fin. A FinFET device disclosed herein includes a plurality of trenches that define a fin, a local isolation that includes a generally U-shaped liner that defines, in part, a cavity and a layer of insulating material positioned within the cavity, and a gate structure positioned around the fin.

主权项

1. A method of forming a FinFET device, comprising:
forming a patterned hard mask layer above a semiconducting substrate; performing at least one first etching process through said patterned hard mask layer to form a plurality of trenches in said semiconducting substrate, said trenches defining a fin; forming a conformal liner layer above said patterned hard mask layer and in said trenches; forming a layer of insulating material in said trenches above said conformal liner layer; performing a process operation to remove portions of said layer of insulating material and to expose portions of said conformal liner layer; performing at least one second etching process to remove portions of said conformal liner layer and said patterned hard mask layer, wherein said second etching process results in a generally U-shaped liner positioned at a bottom of each of said plurality of trenches; performing at least one third etching process on said layer of insulating material to thereby define a reduced-thickness layer of insulating material, wherein at least a portion of said reduced-thickness layer of insulating material is positioned within a cavity defined by said generally U-shaped liner layer; and forming a gate structure around a portion of said fin.