发明名称 Methods and apparatus for insitu analysis of gases in electronic device fabrication systems
摘要 Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
申请公布号 US8813538(B2) 申请公布日期 2014.08.26
申请号 US201113237144 申请日期 2011.09.20
申请人 Applied Materials, Inc. 发明人 Carlson David K.;Kuppurao Satheesh
分类号 G01N7/00;G01N33/00 主分类号 G01N7/00
代理机构 Dugan & Dugan, PC 代理人 Dugan & Dugan, PC
主权项 1. A method for testing a sample gas comprising: adjusting a pressure level of a sample gas; and determining a composition of the adjusted sample gas; wherein the adjusting includes adjusting the pressure level from a low pressure at which measurement by spectroscopy would not be accurate to a higher pressure within a high enough suitable range at which the composition of the sample gas is capable of being accurately determined by spectroscopy; and wherein adjusting the pressure level includes: adding additional sample gas to the sample gas in an isolatable chamber; andcontrolling a booster pump and a variable outlet orifice.
地址 Santa Clara CA US