Bulk finFET with super steep retrograde well

摘要

A method for forming a fin transistor in a bulk substrate includes forming a super steep retrograde well (SSRW) on a bulk substrate. The well includes a doped portion of a first conductivity type dopant formed below an undoped layer. A fin material is grown over the undoped layer. A fin structure is formed from the fin material, and the fin material is undoped or doped. Source and drain regions are provided adjacent to the fin structure to form a fin field effect transistor.

主权项

1. A method for forming a fin transistor with a bulk substrate, comprising:
forming a super steep retrograde well (SSRW) in or on a bulk substrate, the well including a doped portion of a first conductivity type dopant and being formed in the bulk substrate below an undoped layer, the SSRW being formed beneath a location corresponding to a fin structure, wherein forming the super steep retrograde well (SSRW) includes epitaxially growing the SSRW to include at least one diffusion barrier; growing a fin material over the undoped layer; forming the fin structure from the fin material; forming a gate structure over the fin structure; and forming source and drain regions adjacent to the fin structure to form a fin field effect transistor.