发明名称 Liquid processing method, recording medium having recorded program for executing liquid processing method therein and liquid processing apparatus
摘要 Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.
申请公布号 US8815112(B2) 申请公布日期 2014.08.26
申请号 US201113223543 申请日期 2011.09.01
申请人 Tokyo Electron Limited 发明人 Mizuno Tsuyoshi;Namba Hiromitsu;Morozumi Yuichiro;Hishiya Shingo;Harada Katsushige;Hayase Fumiaki
分类号 C25F3/00;C23F1/08;H01L21/67;H01L21/02;H01L21/687 主分类号 C25F3/00
代理机构 Abelman, Frayne & Schwab 代理人 Abelman, Frayne & Schwab
主权项 1. A method for processing a substrate comprising: a first process comprising: supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed;rotating the substrate along with the support unit; andremoving the titanium-containing film from the rear surface of the substrate by supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate while rotating the substrate thereby processing the rear surface of the substrate with the first processing liquid; and a second process comprising: after the first process is completed, supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate, thereby processing the rear surface of the substrate with the second processing liquid to remove remaining particles of titanium.
地址 Tokyo JP