发明名称 |
Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode |
摘要 |
Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer. |
申请公布号 |
US8814622(B1) |
申请公布日期 |
2014.08.26 |
申请号 |
US201113298448 |
申请日期 |
2011.11.17 |
申请人 |
Sandia Corporation |
发明人 |
Resnick Paul J.;Langlois Eric |
分类号 |
H01J9/04;H01J3/02;H01J9/02 |
主分类号 |
H01J9/04 |
代理机构 |
|
代理人 |
Baca Helen S. |
主权项 |
1. A method for producing an encapsulated micro diode in a substrate, the method comprising:
forming a plurality of columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, the plurality of columns, and the respective tips; forming respective trenches in the sacrificial oxide layer around the columns; depositing a dielectric material in the trenches and on top of the sacrificial oxide layer; forming an opening in the dielectric material, wherein the resultant opening extends into the sacrificial oxide layer but not so far as to expose a portion of the tips; depositing a conductive material in the opening to form an anode of the diode; removing the sacrificial oxide layer or a portion thereof; and depositing an encapsulation layer on a surface of the dielectric and a surface of the anode, thereby forming the encapsulated micro diode in the substrate. |
地址 |
Albuquerque NM US |