发明名称 Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode
摘要 Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.
申请公布号 US8814622(B1) 申请公布日期 2014.08.26
申请号 US201113298448 申请日期 2011.11.17
申请人 Sandia Corporation 发明人 Resnick Paul J.;Langlois Eric
分类号 H01J9/04;H01J3/02;H01J9/02 主分类号 H01J9/04
代理机构 代理人 Baca Helen S.
主权项 1. A method for producing an encapsulated micro diode in a substrate, the method comprising: forming a plurality of columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, the plurality of columns, and the respective tips; forming respective trenches in the sacrificial oxide layer around the columns; depositing a dielectric material in the trenches and on top of the sacrificial oxide layer; forming an opening in the dielectric material, wherein the resultant opening extends into the sacrificial oxide layer but not so far as to expose a portion of the tips; depositing a conductive material in the opening to form an anode of the diode; removing the sacrificial oxide layer or a portion thereof; and depositing an encapsulation layer on a surface of the dielectric and a surface of the anode, thereby forming the encapsulated micro diode in the substrate.
地址 Albuquerque NM US