Defect-free junction formation using octadecaborane self-amorphizing implants

摘要

A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.

主权项

1. A method of treating a substrate, comprising:
disposing the substrate in a processing chamber; providing a pulse of a vapor of boron macromolecules into a carrier gas, wherein the pulse of the vapor of boron macromolecules is provided for about 1 second at a flow rate between about 500 sccm and about 2,000 sccm; forming a plasma from the vapor of boron macromolecules and the carrier gas in the processing chamber; immersing the substrate in the plasma; implanting boron from the plasma into a surface of the substrate; and subjecting the implanted surface to a melting and recrystallization process using nanosecond pulses of laser energy.