发明名称 |
Terminal structure, printed wiring board, module substrate, and electronic device |
摘要 |
The present invention relates to a terminal structure and an electronic device having the terminal structure. The terminal structure includes: a terminal having: a conductor layer containing at least one metal selected from gold, silver, and copper; a first layer containing nickel and phosphorus, laid on the conductor layer; a second layer having a smaller atomic ratio of nickel to phosphorus than the first layer and containing Ni3P, laid on the first layer; and a third layer containing a first intermetallic compound of an Ni—Cu—Sn type, laid on the second layer; and a solder layer on the third layer of the terminal. A second intermetallic compound of an Ni—P—Sn type partly covers a surface of the second layer on the third layer side and a maximum thickness of the second intermetallic compound in a lamination direction is from 0.05 to 0.7 μm. |
申请公布号 |
US8816213(B2) |
申请公布日期 |
2014.08.26 |
申请号 |
US201113189062 |
申请日期 |
2011.07.22 |
申请人 |
TDK Corporation |
发明人 |
Horikawa Yuhei;Yoshida Kenichi;Sato Atsushi |
分类号 |
H05K1/03;H05K1/09;H01L23/48;H01L23/52;H01L29/40;H01B5/00;H05K3/24;H01L23/498;H01L23/00;H05K3/34 |
主分类号 |
H05K1/03 |
代理机构 |
Oliff PLC |
代理人 |
Oliff PLC |
主权项 |
1. A terminal structure comprising:
a terminal having:
a conductor layer containing at least one metal selected from gold, silver, and copper;a first layer containing nickel and phosphorus, laid on the conductor layer;a second layer having a smaller atomic ratio of nickel to phosphorus than the first layer and containing Ni3P, laid on the first layer;a third layer containing a first intermetallic compound of an Ni—Cu—Sn type, laid on the second layer; anda solder layer on the third layer of the terminal, wherein a second intermetallic compound of an Ni—P—Sn type partly covers discontinuously a surface of the second layer on the third layer side and a maximum thickness of the second intermetallic compound in a lamination direction is from 0.05 to 0.7 μm, and wherein the second intermetallic compound is not in contact with the solder layer. |
地址 |
Tokyo JP |