Method of manufacturing semiconductor device

摘要

After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.

主权项

1. A method of manufacturing a semiconductor device, comprising:
irradiating a single crystal semiconductor substrate with ions to form an embrittlement region at a predetermined depth from a surface of the single crystal semiconductor substrate; attaching the single crystal semiconductor substrate to a base substrate with an insulating layer interposed therebetween; separating the single crystal semiconductor substrate at the embrittlement region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween; irradiating the single crystal semiconductor layer with a laser beam, so as to melt the single crystal semiconductor layer partially; performing first heat treatment on the single crystal semiconductor layer by one of a diffusion furnace, a heating furnace, and a rapid thermal annealing apparatus after irradiating the single crystal semiconductor layer with the laser beam; adding an impurity element imparting conductivity to the single crystal semiconductor layer to form impurity regions in the single crystal semiconductor layer after performing the first heat treatment; and performing second heat treatment on the single crystal semiconductor layer in which the impurity regions are formed at a temperature lower than that of the first heat treatment.