Complementary metal oxide semiconductor image sensor and method for fabricating the same

摘要

A complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same are provided. The CMOS image sensor includes: a first conductive type substrate including a trench; a channel stop layer formed by using a first conductive type epitaxial layer over an inner surface of the trench; a device isolation layer formed on the channel stop layer to fill the trench; a second conductive type photodiode formed in a portion of the substrate in one side of the channel stop layer; and a transfer gate structure formed on the substrate adjacent to the photodiode to transfer photo-electrons generated from the photodiode.

主权项

1. A method for fabricating an image sensor, the method comprising:
forming a trench in a surface of a substrate; performing an epitaxial process to fill the trench with a channel stop layer; forming a transfer gate structure on the substrate; and forming, in the substrate and in direct contact with the channel stop layer, a photodiode between the trench and the transfer gate structure.