Resist pattern-forming method, and radiation-sensitive resin composition

摘要

A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed with a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a base polymer, a fluorine-atom-containing polymer, a radiation-sensitive acid generator, a solvent, and a compound. The base polymer has an acid-labile group. The fluorine-atom-containing polymer has a content of fluorine atoms higher than a content of fluorine atoms of the base polymer. The compound has a relative permittivity greater than a relative permittivity of the solvent by at least 15. A content of the compound is no less than 10 parts by mass and no greater than 200 parts by mass with respect to 100 parts by mass of the base polymer.

主权项

1. A resist pattern-forming method comprising:
coating a radiation-sensitive resin composition on a substrate to provide a resist film; exposing the resist film; and developing the exposed resist film with a developer solution comprising no less than 80% by mass of an organic solvent, the radiation-sensitive resin composition comprising:
a base polymer having an acid-labile group;a fluorine-atom-containing polymer having a content of fluorine atoms higher than a content of fluorine atoms of the base polymer;a radiation-sensitive acid generator;a solvent; anda compound having a relative permittivity greater than a relative permittivity of the solvent by at least 15,a content of the compound being no less than 10 parts by mass and no greater than 200 parts by mass with respect to 100 parts by mass of the base polymer, andthe base polymer having a structural unit represented by a formula (I): wherein, in the formula (I), R1 represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; and Rp represents an acid-labile group.