发明名称 |
Saturable absorbers for Q-switching of middle infrared laser cavaties |
摘要 |
This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm−1) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe2+:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime. |
申请公布号 |
US8817830(B2) |
申请公布日期 |
2014.08.26 |
申请号 |
US200711925148 |
申请日期 |
2007.10.26 |
申请人 |
The UAB Research Foundation |
发明人 |
Mirov Sergey;Gallian Andrew;Martinez Alan;Fedorov Vladimir |
分类号 |
H01S3/11;H01S3/113;H01S3/092;H01S3/16 |
主分类号 |
H01S3/11 |
代理机构 |
Perkins Coie LLP |
代理人 |
Perkins Coie LLP |
主权项 |
1. A 3 μm Erbium laser comprising:
a Q-switch comprising a passive solid state saturable absorber selected from the group consisting of single crystalline and polycrystalline Fe2+:ZnSe and Fe2+:ZnS to effectuate passive Q-switching in the 3 μm Erbium laser. |
地址 |
Birmingham AL US |