发明名称 Saturable absorbers for Q-switching of middle infrared laser cavaties
摘要 This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm−1) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe2+:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime.
申请公布号 US8817830(B2) 申请公布日期 2014.08.26
申请号 US200711925148 申请日期 2007.10.26
申请人 The UAB Research Foundation 发明人 Mirov Sergey;Gallian Andrew;Martinez Alan;Fedorov Vladimir
分类号 H01S3/11;H01S3/113;H01S3/092;H01S3/16 主分类号 H01S3/11
代理机构 Perkins Coie LLP 代理人 Perkins Coie LLP
主权项 1. A 3 μm Erbium laser comprising: a Q-switch comprising a passive solid state saturable absorber selected from the group consisting of single crystalline and polycrystalline Fe2+:ZnSe and Fe2+:ZnS to effectuate passive Q-switching in the 3 μm Erbium laser.
地址 Birmingham AL US