Methods of forming features in semiconductor device structures

摘要

Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed.

主权项

1. A method of forming a feature, comprising:
forming a resist over a pool of an acidic material or a basic material on a substrate structure; selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions; diffusing acid of the acidic material or base of the basic material from the pool into proximal portions of the resist; and exposing the resist to a developer to remove a greater amount of distal portions of the resist relative to the proximal portions of the resist to form openings in the resist, wherein the openings comprise sloping sidewalls.