发明名称 Wafer processing method
摘要 A wafer processing method for processing a wafer having a device area and a peripheral marginal area surrounding the device area. The method includes: (i) attaching an adhesive tape having an annular adhesive layer only in a peripheral area thereof to the front side of the wafer, whereby the front side of the wafer is fully covered with the adhesive tape and the annular adhesive layer is positioned to correspond to the peripheral marginal area of the wafer, without the annular adhesive layer making contact with the device area; (ii) applying a laser beam to the wafer along division lines to thereby form a plurality of modified layers inside the wafer; (iii) attaching a protective tape to the back side of the wafer and peeling the adhesive tape from the front side of the wafer; and (iv) applying an external force to the wafer to divide the wafer.
申请公布号 US8815644(B2) 申请公布日期 2014.08.26
申请号 US201313870490 申请日期 2013.04.25
申请人 Disco Corporation 发明人 Priewasser Karl
分类号 H01L21/00;H01L21/683;H01L21/78;H01L21/82;H01L21/67;B81C1/00 主分类号 H01L21/00
代理机构 Greer Burns & Crain, Ltd 代理人 Greer Burns & Crain, Ltd
主权项 1. A wafer processing method for processing a wafer having a device area where a plurality of devices are respectively formed in a plurality of regions partitioned by a plurality of crossing division lines, and a peripheral marginal area surrounding said device area which are formed on a front side of said wafer, said wafer processing method comprising: a tape attaching step of attaching a ring an adhesive tape having an annular adhesive layer only in a peripheral area thereof to the front side of said wafer in the condition where the front side of said wafer is fully covered with said adhesive tape and said annular adhesive layer is positioned so as to correspond to said peripheral marginal area of said wafer, without said annular adhesive layer making contact with said device area; a modified layer forming step of holding said wafer on a holding table in the condition where said adhesive tape attached to the front side of said wafer comes into contact with said holding table and next applying a laser beam having a transmission wavelength to said wafer from a back side of said wafer along said division lines to thereby form a plurality of modified layers inside said wafer along said division lines after performing said tape attaching step; an adhesive tape peeling step of attaching a protective tape to the back side of said wafer and peeling said ring adhesive tape from the front side of said wafer after performing said modified layer forming step; and a dividing step of applying an external force to said wafer to divide said wafer along said division lines where said modified layers are respectively formed as division start points, thereby obtaining a plurality of individual device chips after performing said adhesive tape peeling step.
地址 Tokyo JP