发明名称 Laser-assisted cleaving of a reconstituted wafer for stacked die assemblies
摘要 A method of forming stacked die devices includes attaching first semiconductor die onto a wafer to form a reconstituted wafer, and then bonding second semiconductor die onto the first semiconductor die to form a plurality of singulated stacked die devices on the wafer. A support tape is attached to a bottomside of the second semiconductor die. A dicing tape is attached to the wafer. The wafer is laser irradiated before or after attachment of the dicing tape at intended dicing lanes that align with gaps between the first semiconductor die to mechanically weaken the wafer at the intended dicing lanes, but not cut through the wafer. The dicing tape is pulled to cleave the wafer into a plurality of singulated portions to form a plurality of singulated stacked die devices attached to the singulated wafer portions by the dicing tape. The support tape is removed prior to cleaving.
申请公布号 US8815642(B2) 申请公布日期 2014.08.26
申请号 US201314046486 申请日期 2013.10.04
申请人 Texas Instruments Incorporated 发明人 West Jeffrey Alan;Simmons-Matthews Margaret;Camenforte Raymundo M.
分类号 H01L21/78;H01L25/00;H01L25/065;H01L21/56 主分类号 H01L21/78
代理机构 代理人 Shaw Steven A.;Telecky, Jr. Frederick J.
主权项 1. A method of forming stacked die devices, comprising: attaching a plurality of first semiconductor die having plurality of TSVs onto a surface of a wafer to form a reconstituted wafer; bonding a plurality of second semiconductor die each of said die having a topside with a plurality of bond pads thereon, wherein said plurality of second semiconductor die are bonded with their topside down onto said plurality of first semiconductor die to form a plurality of singulated stacked die devices attached to said wafer and wherein said plurality of TSVs on said first semiconductor die are bonded to a portion of said plurality of bond pads of said second semiconductor; attaching a support tape to a bottomside of said plurality of second semiconductor die; attaching a dicing tape to said wafer; laser irradiating said wafer at intended dicing lanes on said wafer that align with gaps between said plurality of first semiconductor die to mechanically weaken but not cut through said intended dicing lanes, and pulling said dicing tape to cleave said wafer along said intended dicing lanes into a plurality of singulated portions, wherein said plurality of singulated portions are attached to said dicing tape and each include one of said plurality of singulated stacked die devices.
地址 Dallas TX US