发明名称 Device including two semiconductor chips and manufacturing thereof
摘要 A device includes a first semiconductor chip with a first contact pad on a first face and a second semiconductor chip with a first contact pad on a first face. The second semiconductor chip is placed over the first semiconductor chip, wherein the first face of the first semiconductor chip faces the first face of the second semiconductor chip. Exactly one layer of an electrically conductive material is arranged between the first semiconductor chip and the second semiconductor chip. The exactly one layer of an electrically conductive material electrically couples the first contact pad of the first semiconductor chip to the first contact pad of the second semiconductor chip.
申请公布号 US8816504(B2) 申请公布日期 2014.08.26
申请号 US201113013022 申请日期 2011.01.25
申请人 Infineon Technologies AG 发明人 Ewe Henrik;Mahler Joachim;Prueckl Anton;Landau Stefan
分类号 H01L29/72 主分类号 H01L29/72
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A device, comprising: a first semiconductor chip comprising a first contact pad on a first face; a second semiconductor chip comprising a first contact pad on a first face, wherein the second semiconductor chip is placed over the first semiconductor chip, the first face of the first semiconductor chip faces the first face of the second semiconductor chip, and the first contact pad on the first face of the first semiconductor chip is directly opposite the first contact pad on the first face of the second semiconductor chip; and exactly one layer of an electrically conductive material arranged between the first semiconductor chip and the second semiconductor chip, wherein the exactly one layer of an electrically conductive material electrically couples the first contact pad of the first semiconductor chip to the first contact pad of the second semiconductor chip,a contour of the first contact pad of the first semiconductor chip defines a first section of the first face of the first semiconductor chip, andthe first section of the first semiconductor chip and the exactly one layer of an electrically conductive material each have a smaller area than then an area of the first face of the first semiconductor chip.
地址 Neubiberg DE