| 摘要 |
One or more embodiments relate to a semiconductor device, comprising: a substrate; and a plurality of first conductive vias, the first conductive vias electrically coupled together, each of the first conductive vias passing through the substrate; and a plurality of second conductive vias, the second conductive vias electrically coupled together, each of the second conductive vias passing through the substrate, the second conductive vias spacedly disposed from the first conductive vias. |
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate; and a plurality of first conductive vias, said first conductive vias electrically coupled together to form a first plate of a capacitor, each of said first conductive vias passing through said semiconductor substrate; and a plurality of second conductive vias, said second conductive vias electrically coupled together to form a second plate of said capacitor, each of said second conductive vias passing through said semiconductor substrate, said second conductive vias spacedly disposed from said first conductive vias,wherein an average length of the first and second conductive vias is greater than 10 times an average distance between the first conductive vias and second conductive vias. |
