Planar polysilicon regions for precision resistors and electrical fuses and method of fabrication

摘要

A semiconductor structure providing a precision resistive element and method of fabrication is disclosed. Polysilicon is embedded in a silicon substrate. The polysilicon may be doped to control the resistance. Embodiments may include resistors, eFuses, and silicon-on-insulator structures. Some embodiments may include non-rectangular cross sections.

主权项

1. A method of fabricating a resistive element in a semiconductor substrate, comprising:
forming a first shallow trench isolation region and a second shallow trench isolation region in the silicon layer; forming a recess in the semiconductor substrate, disposed between the first shallow trench isolation region and the second shallow trench isolation region, wherein the recess has a depth less than a depth of the first and second shallow trench isolation region; forming an insulator layer in the recess, and on exposed sidewall portions of the first shallow trench isolation region and the second shallow trench isolation region; forming a polysilicon region in the recess; planarizing the polysilicon region; forming one or more silicide regions on the polysilicon region; and forming a plurality of contacts disposed on the one or more silicide regions.