| 发明名称 | Protective element for electronic circuits | ||
| 摘要 | A protective element for electronics has at least one Schottky diode and at least one Zener diode which are located between a power supply and the electronics, the anode of the Schottky diode being connected to the power supply and the cathode of the Schottky diode being connected to the electronics, and the cathode and the anode of the Zener diode are connected to ground. The Schottky diode is a trench MOS barrier junction diode or trench MOS barrier Schottky (TMBS) diode or a trench junction barrier Schottky (TJBS) diode and includes an integrated semiconductor arrangement, which has at least one trench MOS barrier Schottky diode and a p-doped substrate, which is used as the anode of the Zener diode. | ||
| 申请公布号 | US8816466(B2) | 申请公布日期 | 2014.08.26 |
| 申请号 | US201013505534 | 申请日期 | 2010.09.21 |
| 申请人 | Robert Bosch GmbH | 发明人 | Qu Ning;Goerlach Alfred |
| 分类号 | H01L29/47 | 主分类号 | H01L29/47 |
| 代理机构 | Kenyon & Kenyon LLP | 代理人 | Kenyon & Kenyon LLP |
| 主权项 | 1. A protective element for an electronics unit, comprising: at least one Schottky diode and at least one Zener diode located between a power supply and the electronics unit; wherein: the anode of the Schottky diode is connected to the power supply;the cathode of the Schottky diode and the cathode of the Zener diode are connected to the electronics unit;the anode of the Zener diode is connected to ground; andthe Schottky diode is one of a trench MOS barrier Schottky diode or a trench junction barrier Schottky diode, and is developed in an integrated semiconductor system including a p-doped substrate, which is the anode of the Zener diode, and a buried n-doped laver. | ||
| 地址 | Stuttgart DE | ||