发明名称 TFT array substrate and manufacturing method thereof
摘要 A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.
申请公布号 US8816346(B2) 申请公布日期 2014.08.26
申请号 US201213664852 申请日期 2012.10.31
申请人 Beijing BOE Optoelectronics Technology Co., Ltd. 发明人 Wang Zhangtao;Qiu Haijun;Min Tae Yup;Rim Seung Moo
分类号 H01L29/04;H01L29/66;H01L27/12 主分类号 H01L29/04
代理机构 Hasse & Nesbitt LLC 代理人 Hasse & Nesbitt LLC ;Nesbitt Daniel F.
主权项 1. A thin film transistor (TFT) array substrate, comprising: a substrate; a gate line and a gate electrode integrated therewith formed on the substrate and covered by a gate insulating layer, a semiconductor layer, and an ohmic contact layer sequentially; an insulating layer formed on the substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer, wherein a top surface of the insulating layer is flush with a top surface of the ohmic contact layer so as to form a substantially flat surface; a trench formed in the ohmic contact layer and dividing the ohmic contact layer on the semiconductor layer; a data line and a first source/drain electrode integrated therewith formed on the insulating layer and the ohmic contact layer; a second source/drain electrode formed on the insulating layer and the ohmic contact layer and opposing to the first source/drain electrode with respect to the trench; a passivation layer formed on the first and second source/drain electrodes and the data line with a via hole formed in the passivation layer over the second source/drain electrode; and a pixel electrode formed on the passivation layer and connected with the second source/drain electrode through the via hole.
地址 Beijing CN