| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for regenerating an etchant and an etchant regenerating apparatus each capable of removing, at a low cost, hydrosilicofluoric acid within the etchant.SOLUTION: The provided method for regenerating an etchant comprises: a deposition step of inducing the deposition of ammonium silicofluoride by cooling an etchant including ammonium fluoride and having treated a silicon-containing compound; a recovery step of subsequently recovering at least a portion of the deposited ammonium silicofluoride from the etchant; and an adjustment step of subsequently adjusting the ammonium fluoride concentration of the etchant from which the deposited ammonium silicofluoride has been at least partially recovered. |
