发明名称 |
COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a composite substrate suitable for efficiently manufacturing a high-quality semiconductor wafer in good yield and a method for manufacturing a semiconductor wafer using the same.SOLUTION: A composite substrate 1 includes a support substrate 11 including a mullite phase of not less than 35 mass% and not more than 65 mass% and an alumina phase of not less than 35 mass% and not more than 65 mass% as a crystal phase and a semiconductor film 13 arranged on a principal surface 11m side of the support substrate 11. A method for manufacturing a semiconductor wafer 3 includes the steps of: preparing the composite substrate 1; forming a composite substrate 2 with a semiconductor layer by growing at least one semiconductor layer 20 on the semiconductor film 13 of the composite substrate 1; and forming a semiconductor wafer 3 by removing the support substrate 11 from the composite substrate 2 with the semiconductor layer. |
申请公布号 |
JP2014154668(A) |
申请公布日期 |
2014.08.25 |
申请号 |
JP20130022222 |
申请日期 |
2013.02.07 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
SEKI HIROKI;SATO KAZUNARI;YAMAMOTO YOSHIYUKI;MATSUBARA HIDEKI;SOGABE KOICHI;HASEGAWA MIKITO;TSUJI YUTAKA;FUJII AKITO |
分类号 |
H01L21/02;C30B25/18;C30B29/38;H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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