发明名称 ION BOMBARDMENT APPARATUS AND METHOD FOR CLEANING SURFACE OF SUBSTRATE BY USING THE SAME
摘要 PROBLEM TO BE SOLVED: To make an amount of etching surfaces of substrates substantially uniform by substantially homogenizing a plasma density inside a vacuum chamber even if the substrates mounted inside the vacuum chamber have various sizes and arranged in different positions.SOLUTION: An ion bombardment apparatus 1, which cleans surfaces of substrates W in prior to deposition of a film on each surface thereof by mounting the substrates W inside a vacuum chamber 2 and irradiating the substrates with gas ion generated inside the vacuum chamber 2, comprises: electrodes 3 for emitting electrons and anodes 4 for receiving the electrons, arranged opposing to each other on inner wall surfaces of the vacuum chamber 2; and discharge power sources 5 arranged between the electrodes 3 and the anodes 4. A plurality of anodes 4 are arranged in the same direction as at least a direction in which the substrates W are mounted, and the plurality of discharge power sources 5 are provided to be paired with the respective anodes 4. Current or voltage of the anodes 4 arranged in a plural number is set so that a plasma density generated between the anodes 4 and the electrodes 4 is homogenized in the mounting direction of the substrates W.
申请公布号 JP2014152356(A) 申请公布日期 2014.08.25
申请号 JP20130022264 申请日期 2013.02.07
申请人 KOBE STEEL LTD 发明人 HIROTA SATOSHI;NOMURA HOMARE
分类号 C23C14/02 主分类号 C23C14/02
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