发明名称 |
FIELD EFFECT TRANSISTOR |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a field effect transistor which has a high breakdown voltage and a low on-resistance.SOLUTION: The field effect transistor includes: a first semiconductor part made of silicon, germanium, or silicon germanium; a second semiconductor part made of a nitride-based semiconductor; a diffusion preventing layer which is formed between the first semiconductor part and the second semiconductor part and prevents atomic diffusion between the first semiconductor part and the second semiconductor part; a gate insulating film formed on a surface of the first semiconductor part; and a gate electrode formed on the gate insulating film.</p> |
申请公布号 |
JP2014154729(A) |
申请公布日期 |
2014.08.25 |
申请号 |
JP20130023731 |
申请日期 |
2013.02.08 |
申请人 |
FURUKAWA ELECTRIC CO LTD:THE;FUJI ELECTRIC CO LTD |
发明人 |
KANBAYASHI HIROSHI ; TERAMOTO AKINOBU ; OMI TADAHIRO |
分类号 |
H01L29/812;H01L21/336;H01L21/337;H01L21/338;H01L29/12;H01L29/778;H01L29/78;H01L29/808 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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