| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which improves reliability in reading data.SOLUTION: The semiconductor memory device includes multiple bit lines and word lines, a memory cell array having multiple memory cells, a word line control circuit for controlling word lines, a column decoder for applying a writing voltage to a memory cells via the bit lines and a control voltage generation circuit. The semiconductor memory device applies a voltage to a word line having at least a prescribed number of memory cells for which writing was performed until a prescribed threshold voltage in the same word line and applies an erasure voltage from a well.</p> |
