发明名称 |
VAPOR DEPOSITION MATERIAL, GAS BARRIER VAPOR DEPOSITION FILM AND METHOD FOR MANUFACTURING GAS BARRIER VAPOR DEPOSITION FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposition material capable of suppressing occurrence of a splash phenomenon and obtaining high gas barrier.SOLUTION: A gas barrier vapor deposition film 10 has a vapor deposition film 12 formed on one surface of a polymer film substrate 11 by depositing a vapor deposition material including either or both of a metal silicon powder and a silicon dioxide powder and either or both of a metal tin powder and a tin oxide powder using a heating type vacuum vapor deposition apparatus. A ratio (O/(Si+Sn)) of the number of oxygen (O) atoms to the total number of silicon (Si) atoms and tin (Sn) atoms in the vapor deposition film 12 vapor-deposited on the polymer film substrate 11 is 1.0-2.0, and a ratio (Sn/Si) of the number of the tin (Sn) atoms to that of silicon (Si) atoms is 0.03-0.15. |
申请公布号 |
JP2014152372(A) |
申请公布日期 |
2014.08.25 |
申请号 |
JP20130024596 |
申请日期 |
2013.02.12 |
申请人 |
TOPPAN PRINTING CO LTD |
发明人 |
KUWAGATA YUSUKE;YOSHIHARA TOSHIAKI |
分类号 |
C23C14/24;B32B9/00 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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