发明名称 SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor wafer and a semiconductor wafer manufacturing method, which improve yield.SOLUTION: A semiconductor wafer comprises an element region 3 where a semiconductor element is formed and a peripheral region 4 around the element region 3. The element region 3 includes a first lamination structure 5 including a resin layer 11 formed so as to cover the semiconductor element, a re-wiring layer 14 formed in the resin layer 11 and an overcoat layer 15 formed so as to cover the re-wiring layer 14 and the resin layer 11. The peripheral region 4 includes a second lamination structure 6 on an innermost periphery so as to include the resin layer 11. Like in the first lamination structure 5, the resin layer 11 is formed in the second laminate structure 6. By doing this, since a layer thickness of the second lamination structure 6 is thin and different from the conventional art where there is a level difference with a layer thickness of the first lamination structure 5, the resin layer 11 having the same film thickness with the first lamination structure 5 is formed, the level difference can be eliminated and yield can be improved.
申请公布号 JP2014154867(A) 申请公布日期 2014.08.25
申请号 JP20130026332 申请日期 2013.02.14
申请人 SEIKO EPSON CORP 发明人 TERAO SHINJI;YUZAWA HIDEKI
分类号 H01L23/12 主分类号 H01L23/12
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