| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an inductively coupled plasma processing apparatus that is capable of performing uniform plasma processing on a large-sized processing target substrate using a metal window.SOLUTION: An inductively coupled plasma processing apparatus, which performs inductively coupled plasma processing on a rectangular substrate, includes: a processing chamber in which the substrate is accommodated; a high-frequency antenna for generating inductively coupled plasma in the processing chamber; and a metal window 2 arranged between a plasma generation area, in which the inductively coupled plasma is generated, and the high-frequency antenna and provided so as to correspond to the substrate. The metal window 2 is divided into a plurality of areas by slits 7 and has long-side side areas 202b corresponding to long sides 2b and short-side side areas 202a corresponding to short sides 2a. Outer slits 71, out of the slits 7, have short-side side portions 71a corresponding to the short-side side areas 202a and long-side side portions 71b corresponding to the long-side side areas 202b, with a width of the short-side side portions 71a being wider than that of the long-side side portions 71b.</p> |
