摘要 |
<p>The present invention relates to a thin film transistor display panel and a manufacturing method thereof. According to an embodiment of the present invention, a protection film, located between a first electric field generating electrode and a second electric field generating electrode, which are overlapped by each other, includes a thin, transparent, photosensitive, and organic material. The protection film is used as a photosensitive film to form the first electric field generating electrode. Therefore, the protection film and the first electric field generating electrode, located under the protection film, are formed at the same time by using one photosensitive mask. Accordingly, an increase of costs for manufacturing the thin film transistor display panel can be prevented.</p> |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
LEE, EU GENE;SONG, MIN CHUL;KIM, SUNG MAN;CHO, YOUNG JE;OH, HWA YEUL;HWANG, HYUN KI |