| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device capable of reducing the amount of adhesion of foreign particles to a workpiece.SOLUTION: In a semiconductor manufacturing device comprising a processing chamber 1, means for supplying a gas to the processing chamber 1, exhaust means 41 for decompressing the processing chamber 1, a high-frequency power supply for generating plasma, a stage 4 for mounting a workpiece 2, a high-frequency bias power supply for accelerating an ion incident on the workpiece 2, and a confinement plate 89, a plasma processing device inclines the height of an upper surface of the confinement plate 89 in a direction in which the height becomes high on the stage 4 side and becomes low on the wall surface side of the processing chamber 1. |
