发明名称 NONVOLATILE MEMORY CACHE
摘要 <p>PROBLEM TO BE SOLVED: To provide a nonvolatile memory cache having an architecture capable of reducing energy consumption of the writing operation of data for each cache line in a memory cache using the memory cell of an MRAM such as a spin injection memory.SOLUTION: In the memory cache, a data array is configured in a memory cell into which data is written by conducting a current required for flux reversal of an MTJ element. Null flag that shows that a cache line in the data array is composed of continuous zero bits is provided by a byte grain size or a word grain size for each cache line. The null flag is provided with a tag array of the memory cache.</p>
申请公布号 JP2014153965(A) 申请公布日期 2014.08.25
申请号 JP20130023947 申请日期 2013.02.11
申请人 KOBE UNIV 发明人 KAWAGUCHI HIROSHI ; YOSHIMOTO MASAHIKO ; NAKADA YOHEI ; JEONG JIN-WOOK
分类号 G06F12/08 主分类号 G06F12/08
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