| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and method that enables consecutive processing by a compact device configuration, and that can efficiently remove boron and phosphor from metal silicon at a low cost.SOLUTION: A high-frequency induction coil integrated crucible 10 is used. In the crucible 10, a coil 11 is configured by rectangular or circular horizontal winding. An upper side 11a of the coil is arranged in a horizontal direction or in an inclined manner, in an axial direction D of the coil, and a lower side 11b of the coil is arranged in a stepwise manner so as to have one or more valley bottoms E to the horizontal direction of the coil. A part toward the valley bottoms E is inclined. A silicon material is brought into a molten metal state by adding an oxidant, and forces F are acted to the molten metal S in the valley V from both sides so as to cross each other, and thereby, a strong stirring action is generated. In addition, because a temperature can be raised high enough to melt SiO2, and because self lining is possible, boron and phosphor can be efficiently removed at a low cost without a special crucible. |
