| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of advantageously manufacturing a graphene/SiC composite material in which a flat large-area graphene has been laminated and formed at an atomic level atop the C (carbon surface) of a SiC monocrystal substrate.SOLUTION: The C surface of a SiC monocrystal substrate is bared by removing an oxide film covering the surface of the SiC monocrystal substrate and formed as a result of spontaneous oxidation, and after a TiC layer has subsequently been formed on the C surface of the SiC monocrystal substrate, the SiC monocrystal substrate on which the TiC layer has been formed is heated within an argon gas atmosphere so as to manufacture a graphene/SiC composite material in which one, two, or more graphene layers have been laminated and formed atop the SiC monocrystal substrate. |
