发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To suppress that treatment liquid flows in a gas jet nozzle during processing of a lower surface of a substrate with treatment liquid.SOLUTION: In a substrate processing apparatus 1, an outer edge part of a substrate 9 in a horizontal state is supported by a circular substrate support part 141 from below, and a lower surface opposite part 211 having an opposite surface 211a facing a lower surface 92 of the substrate 9 is provided inside the substrate support part 141. A gas jet nozzle 180 for jetting heated gases to the lower surface 92 of the substrate 9 is provided on the lower surface opposite part 211, and in processing an upper surface 91 of the rotating substrate 9 with the treatment liquid jetted by an upper nozzle 181, the heated gases heat the substrate 9. Also, a lower nozzle 182 is provided on the lower surface opposite part 211, so that it is possible to process the lower surface 92 of the substrate 9 with the treatment liquid. By the gas jet nozzle 180 projecting from the opposite surface 211a, it is suppressed that the treatment liquid flows in the gas jet nozzle 180 during the treatment.
申请公布号 JP2014154858(A) 申请公布日期 2014.08.25
申请号 JP20130026224 申请日期 2013.02.14
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 IZUMIMOTO KENJI;MIURA SANAE;KOBAYASHI KENJI;SAITO KAZUHIDE;IWASAKI AKIHISA
分类号 H01L21/306;H01L21/304 主分类号 H01L21/306
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