发明名称 PLANARIZATION METHOD AND PLANARIZATION DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To suppress polishing damage on the processed surface of a workpiece including a silicon oxide film.SOLUTION: A planarization method and a planarization device are provided. In the planarization method, while supplying a process liquid 15 containing fluorine ions 24 to the surface of a solid plate 11, the processed surface of a workpiece 12 is planarized by bringing into contact or approaching extremely the processed surface of a workpiece 12 including a silicon oxide film, and the surface of the solid plate 11 adsorbing hydrogen ions 23.</p>
申请公布号 JP2014154608(A) 申请公布日期 2014.08.25
申请号 JP20130020943 申请日期 2013.02.05
申请人 TOSHIBA CORP 发明人 KAWASE AKIFUMI ; MATSUI YUKITERU ; MINAMI FUKUGAKU ; EDA HAJIME
分类号 H01L21/304 主分类号 H01L21/304
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