摘要 |
<p>PROBLEM TO BE SOLVED: To suppress polishing damage on the processed surface of a workpiece including a silicon oxide film.SOLUTION: A planarization method and a planarization device are provided. In the planarization method, while supplying a process liquid 15 containing fluorine ions 24 to the surface of a solid plate 11, the processed surface of a workpiece 12 is planarized by bringing into contact or approaching extremely the processed surface of a workpiece 12 including a silicon oxide film, and the surface of the solid plate 11 adsorbing hydrogen ions 23.</p> |