| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element capable of improving monochromaticity and light-emitting efficiency by suppressing deep light emission.SOLUTION: A nitride semiconductor light-emitting element includes a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. The n-type nitride semiconductor layer includes AlGaN(0<n≤1), and the C concentration contained therein is not more than 1×10/cm. |
