| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing damage caused by a foreign charge while suppressing generation of unnecessary leak current, a method for manufacturing the semiconductor device, and a system including the semiconductor device.SOLUTION: A semiconductor device 100 comprises: an N-type semiconductor layer 11; a circuit layer provided on a principal surface 151 of the N-type semiconductor layer 11 and including a semiconductor layer 90 in which a circuit element 40 is formed; a multilayer wiring layer formed including interlayer insulating films 20 and 21 alternately laminated on the circuit layer and layer wirings 240 and 250; a conductive part configured including a through conductor composed of a first via 225, a first conductor 245, and a second via 235 provided through the circuit layer and the multilayer wiring layer and an electrode 260 connected to the through conductor and electrically isolated from other parts; and an N-type extraction electrode region 182 connected to the conductive part, formed on a principal surface 151 of the N-type semiconductor layer 11, and having a higher impurity concentration than the N-type semiconductor layer 11. |
